Recombination-enhanced of dislocation glide in 4H-SiC and GaN under electron beam irradiation

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Аннотация

The analysis of the investigations of recombination-enhanced dislocation transport in GaN and 4H-SiC is carried out. It is shown that in both crystals, when irradiated with a low-energy electron beam, dislocations can shift even at liquid nitrogen temperature. The activation energies of dislocation glide stimulated by electron beam irradiation are estimated. The results are presented demonstrating practically activation-free migration of double kinks along a 30° partial dislocation with a silicon core in 4H-SiC. It is shown that localized obstacles significantly affect the dislocation transport in GaN both under the action of shear stresses and under irradiation. Nonequilibrium charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier, but also stimulate the detachment of dislocations from obstacles.

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Авторлар туралы

Y. Kulanchikov

Institute of Microelectronics Technology and High-Purity Materials, RAS

Email: yakimov@iptm.ru
Ресей, Chernogolovka

P. Vergeles

Institute of Microelectronics Technology and High-Purity Materials, RAS

Email: yakimov@iptm.ru
Ресей, Chernogolovka

E. Yakimov

Institute of Microelectronics Technology and High-Purity Materials, RAS

Email: yakimov@iptm.ru
Ресей, Chernogolovka

E. Yakimov

Institute of Microelectronics Technology and High-Purity Materials, RAS

Хат алмасуға жауапты Автор.
Email: yakimov@iptm.ru
Ресей, Chernogolovka

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2. Fig. 1. Dependences of the lengths of single and double DUs introduced by indentation at room temperature on the temperature of subsequent annealing [21]. The loads and durations of deformation are shown in the figure.

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3. Fig. 2. DU image in the CL mode at a wavelength of 424 nm. The lines mark the positions of partial dislocations in previous scans. It is evident that inclined and horizontal dislocations are displaced by different distances.

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4. Fig. 3. DU image in the CL mode at a wavelength of 424 nm: at a scan rate of 160 s/frame (a), the subsequent image at a scan rate of 20 s/frame (b); c – Fig. a, superimposed on Fig. b, the lines mark the positions of dislocations in Fig. a.

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5. Fig. 4. Dislocation velocity as a function of beam current at Eb = 20 keV and temperatures of 80 and 300 K. The extrapolated dependences intersect the abscissa axis at approximately 10 nA.

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6. Fig. 5. Panchromatic images obtained at liquid nitrogen temperature before (a) and after nine consecutive scans at a rate of 160 s/frame (b); displaced dislocations are marked with arrows. Eb = 10 keV.

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7. Fig. 6. Panchromatic images obtained at room temperature before (a) and after irradiation with an electron beam with a fixed position (b); the arrow indicates the beam position. Eb = 10 keV.

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