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Magnetic energy of interaction between a synthetic antiferromagnet and a free layer of a spin-tunnel element
- Authors: Polyakov O.P.1,2, Polyakov P.A.1, Vasilyev D.V.3, Amelichev V.V.3, Kasatkin S.I.2, Kostyuk D.V.3, Shevtsov V.S.1,3, Orlov E.P.3
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Affiliations:
- Faculty of Physics, Lomonosov Moscow State University
- Trapeznikov Institute of Control Sciences of the Russian Academy of Sciences
- Scientific-Manufacturing Complex “Technological Centre”
- Issue: Vol 87, No 11 (2023)
- Pages: 1653-1657
- Section: Articles
- URL: https://ruspoj.com/0367-6765/article/view/654568
- DOI: https://doi.org/10.31857/S036767652370285X
- EDN: https://elibrary.ru/FHJTCJ
- ID: 654568
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Abstract
An exact expression is found for the magnetostatic energy of interaction of a synthetic antiferromagnet with a free layer of a spin-tunnel element, the ferromagnetic layers of which have the shape of strongly oblate ellipsoids of revolution. It has been established that the exact value of this interaction energy can differ significantly from the usual value, which is calculated using the expression for the demagnetizing field. The parameters are calculated for which the complete compensation of the magnetic interaction of a synthetic antiferromagnet occurs.
About the authors
O. P. Polyakov
Faculty of Physics, Lomonosov Moscow State University; Trapeznikov Institute of Control Sciences of the Russian Academy of Sciences
Email: D.Vasilyev@tcen.ru
Russia, 119991, Moscow; Russia, 117997, Moscow
P. A. Polyakov
Faculty of Physics, Lomonosov Moscow State University
Email: D.Vasilyev@tcen.ru
Russia, 119991, Moscow
D. V. Vasilyev
Scientific-Manufacturing Complex “Technological Centre”
Author for correspondence.
Email: D.Vasilyev@tcen.ru
Russia, 124498, Moscow
V. V. Amelichev
Scientific-Manufacturing Complex “Technological Centre”
Email: D.Vasilyev@tcen.ru
Russia, 124498, Moscow
S. I. Kasatkin
Trapeznikov Institute of Control Sciences of the Russian Academy of Sciences
Email: D.Vasilyev@tcen.ru
Russia, 117997, Moscow
D. V. Kostyuk
Scientific-Manufacturing Complex “Technological Centre”
Email: D.Vasilyev@tcen.ru
Russia, 124498, Moscow
V. S. Shevtsov
Faculty of Physics, Lomonosov Moscow State University; Scientific-Manufacturing Complex “Technological Centre”
Email: D.Vasilyev@tcen.ru
Russia, 119991, Moscow; Russia, 124498, Moscow
E. P. Orlov
Scientific-Manufacturing Complex “Technological Centre”
Email: D.Vasilyev@tcen.ru
Russia, 124498, Moscow
References
- Liu M., Du W., Su H. et al. // NPG Asia Mater. 2021. V. 13. P. 7.
- Zavornitsyn R.S., Naumova L.I., Milyaev M.A. et al. // J. Phys. Conf. Ser. 2019. V. 1389. Art. No. 012157.
- Silva A.V., Leitao D.C., Valadeiro J. et al. // Eur. Phys. J. Appl. Phys. 2015. V. 72. Art. No. 10601.
- Chan P.H., Li X., Pong P.W.T. // Vacuum. 2017. V. 140. P. 111.
- Liu M., Du W., Su H. et al. // Nanotechnology. 2021. V. 32. Art. No. 505504.
- Fowley C., Chun B.S., Wu H.C. et al. // Appl. Phys. Lett. 2009. V. 95. Art. No. 222506.
- Амеличев В.В., Васильев Д.В., Костюк Д.В. и др. // Микроэлектроника. 2021. Т. 50. № 6. С. 461; Amelichev V.V., Vasiliev D.V., Kostyuk D.V. et al. // Russ. Microelectron. 2021. V. 50. No. 6. P. 420.
- Ikegawa S., Mancoff S.F., Janesky J., Aggarwal S. // IEEE Trans. Electron Devices. 2020. V. 67. No. 4. P. 1407.
- Wang S., Fujiwaraa H., Sunb M. // J. Magn. Magn. Mater. 2005. V. 295. P. 246.
- Worledge D.C. // Appl. Phys. Lett. 2004. V. 84. P. 2847.
- Polyakov O., Amelichev V., Zhukov D. et al. // Sensors. 2021. V. 21. Art. No. 2118.
- Поляков О.П., Касаткин С.И., Амеличев В.В., Поляков П.А. // Изв. РАН. Сер. физ. 2021. Т. 85. № 11. С. 1554; Polyakov O.P., Polyakov P.A., Kasatkin S.I., Amelichev V.V. // Bull. Russ. Acad. Sci. Ser. Phys. 2021. V. 85. No. 11. P. 1217.
- Стрэттон Дж. Теория электромагнетизма. М.–Л.: ГИТТЛ, 1948. 539 с.
- Ландау Л.Д., Лифшиц Е.М. Электродинамика сплошных сред. Теоретическая физика. Т. 8. М.: Наука, 1982. 620 с.
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