Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate

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The issues of modeling the electrophysical characteristics of a silicon conical field effect GAA nanotransistor are discussed. An analytical model of the drain current of a transistor with a fully enclosing conical gate with a stack sub-gate oxide SiO2/HfO2 has been developed, taking into account the effect of the charge of the interphase trap at the Si/SiO2 interface. To simulate the potential distribution in a conical working area under the condition of constant trap density, an analytical solution of the Poisson equation was obtained using the method of parabolic approximation in a cylindrical coordinate system with appropriate boundary conditions. The potential model was used to develop an expression for the GAA drain current of a nanotransistor with a stack gate oxide. The key electrophysical characteristics are numerically investigated depending on the density of traps and the thicknesses of SiO2 and HfO2 layers.

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作者简介

N. Masalsky

Federal Research Center Scientific Research Institute for System Research, Russian Academy of Sciences Academy

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Email: volkov@niisi.ras.ru
俄罗斯联邦, Moscow

参考

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2. Fig. 1. Sketch of a silicon GAA nanotransistor with a conical working area with a stack gate dielectric and defects at the boundary (indicated by black circles), where 1 is the source, 2 is the drain, 3 is the conical working area, 4 is the stack gate dielectric with a film thickness of SiO2 — tox, HfO2 — tk, Lg is the length of the working area, Rmax is the radius of the working area on the source side, Rmin is the radius of the working area on the drain side.

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3. 2. Distribution of the surface potential along a conical working area with Rnorm = 0.7 for various Nf densities at Ugs = Uds = 0.1 V.

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4. 3. Distribution of the surface potential along the conical working area for various Rnorm and fixed Nf = 2 × 1012 cm–2 at Ugs = Uds = 0.1 V, where 1 — Rnorm = 1; 2 — Rnorm = 0.7.

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5. Fig. 4. Dependence of Ids_max(Rnorm) at Uds = Ugs = 0.6 V.

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6. Fig. 5. Dependence of Ids_max(Nf) for Uds, Ugs, similar to Fig. 4.

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7. Fig. 6. DUth(Nf) dependence.

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8. Fig. 7. The subthreshold slope (SS) from Rnorm, where the solid line is inclusive of the MHD, the dotted line is without.

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9. Figure 8. DIoff dependence(Rnorm).

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