Contact potential difference in the absence of current through the sample in the quantum hall effect regime in InGaAs/InAlAs heterostructure
- Authors: Gudina S.V.1, Neverov V.N.1, Turutkin K.V.1, Vasil’evskii I.S.2, Vinichenko A.N.2
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Affiliations:
- M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences
- National Research Nuclear University MEPhI
- Issue: Vol 125, No 2 (2024)
- Pages: 153-157
- Section: ЭЛЕКТРИЧЕСКИЕ И МАГНИТНЫЕ СВОЙСТВА
- URL: https://ruspoj.com/0015-3230/article/view/662782
- DOI: https://doi.org/10.31857/S0015323024020059
- EDN: https://elibrary.ru/YPJWRA
- ID: 662782
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