Buffer layer effect on the structure, morphology, and magnetic properties of Mn5Ge3 films synthesized on Si(111) substrates

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Abstract

The effect of the MnxGey buffer layer on the morphology, transport and magnetic properties of Mn5Ge3 thin films grown on substrates Si(111) has been studied. Using X-ray diffraction analysis and atomic force microscopy, it has been found that changing the thickness and structure of the buffer layer with a gradient MnxGey composition has made it possible to control the crystalline quality and smoothness of epitaxial films. Changes in the microstructure and surface roughness has not affected the temperature of the phase transitions revealed from the temperature dependences of the resistivity and magnetization at 75 and 300 K. It has been shown that the features of the magnetization curve shape for films with different buffer layers have been closely related to the inhomogeneity of the films in thickness and surface roughness while maintaining the micromagnetic constants and orientation of the easy magnetization axis. The value of the change in the magnetic part of entropy ΔS has been calculated to be 2.1 J kg–1 K–1 at 1 T, which is comparable with the value for gadolinium and exceeds that for Mn5Ge3(001) films grown on GaAs substrates.

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About the authors

M. V. Rautskii

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Author for correspondence.
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

A. V. Lukyanenko

Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Siberian Federal University

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk

S. V. Komogortsev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Reshetnev Siberian State University of Science and Technology

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk

I. A. Sobolev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Siberian Federal University

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk

L. V. Shanidze

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

I. A. Bondarev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

M. A. Bondarev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

E. V. Eremin

Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Siberian Federal University; Reshetnev Siberian State University of Science and Technology

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk; Krasnoyarsk

I. A. Yakovlev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

A. L. Sukhachev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

M. S. Molokeev

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

L. A. Solovyov

Institute of Chemistry and Chemical Technology of the Siberian Branch of the RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

S. N. Varnakov

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

S. G. Ovchinnikov

Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Siberian Federal University

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk

N. V. Volkov

Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk

A. S. Tarasov

Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Siberian Federal University

Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk

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Supplementary files

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2. Fig. 1. Schematic diagram of the process of synthesis of three images.

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3. Fig. 2. Diffraction patterns for three different samples. * the most intense peaks identified as diffraction from the 00l plane of the Mn5Ge3 crystal are marked.

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4. Fig. 3. AFM images of the surface of samples 1 (a), 2 (b) and 3 (c).

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5. Fig. 4. Temperature dependences of specific resistance (a), its derivative (b) and magnetization (inset) for Mn5Ge3 films.

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6. Fig. 5. Temperature dependences of magnetization M(T) in a field of 100 Oe for three samples. The inset shows the derivatives dM/dT.

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7. Fig. 6. Field dependences of magnetization M(H) of sample 1 at a temperature of 100 K in a magnetic field parallel and perpendicular to the plane of the film.

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8. Fig. 7. Film magnetization curves and their description (solid lines) by expression (2) — a; non-uniformity of the field Hs, determined using the description of the magnetization curves by expression (2), using samples 3 and 1 as an example (the height of the column corresponds to the statistical weight fi of the film section characterized by the field HSi) — b.

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9. Fig. 8. Saturation field HS for films of different thicknesses. Solid line — equation (1).

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10. Fig. 9. Change in magnetic entropy DS in three different Mn5Ge3/Si samples calculated from magnetization curves measured in a field of up to 15 kOe applied parallel to the film plane in the [001] direction of Mn5Ge3.

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