Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method

T. G. Yugova; Югова Т. Г.; V. A. Chuprakov; Чупраков В. А.; N. A. Sanzharovsky; Санжаровский Н. А.; A. A. Yugov; Югов А. А.; I. D. Martynov; Мартынов И. Д.; S. N. Knyazev; Князев С. Н.

doi:10.31857/S0023476124030036

Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method

Authors: Yugova T.G.¹, Chuprakov V.A.¹, Sanzharovsky N.A.¹, Yugov A.A.¹, Martynov I.D.¹, Knyazev S.N.¹
Affiliations:
1. The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Issue: Vol 69, No 3 (2024)
Pages: 393-399
Section: REAL STRUCTURE OF CRYSTALS
URL: https://ruspoj.com/0023-4761/article/view/673168
DOI: https://doi.org/10.31857/S0023476124030036
EDN: https://elibrary.ru/XPGUJR
ID: 673168

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Abstract

The effect of a traveling magnetic field on the parameters of Te-doped GaAs single crystals in the carrier density range of 5 × 10¹⁷–2 × 10¹⁸ cm^–3 has been studied. A traveling magnetic field was induced in a melt by a graphite inductor located in the setup chamber around the main heater. It is shown that a high-frequency magnetic field slightly reduces the dislocation density in the crystals without changing the shape of the dislocation distribution over their cross sections. The magnetic field affects the impurity distribution along the crystal axis, almost doubling the distance between the striation bands from 9 µm in the absence of magnetic field to 17 µm in a field with a frequency of 300 Hz.

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Terashima K., Fukuda T. // J. Cryst. Growth. 1983. V. 63. P. 423. https://doi.org/10.1016/0022-0248(83)90236-1
Osaka J., Kohda Н., Kobayashi Т., Hoshikawa К. // Jpn. J. Appl. Phys. 1984. V. 23. P. L195. https://doi.org/10.1143/JJAP.23.L195
Terashima K., Katsumata T., Orito F. // Jpn. J. Appl. Phys. 1984. V. 23. P. L302. https://doi.org/10.1143/JJAP.23.L302
Hoshi K., Isawa N., Suzuki T., Ohkubo Y. // J. Electrochem. Soc. 1985. V. 132. P. 693. https://doi.org/10.1149/1.2113933
Terashima K., Fukuda T. // J. Cryst. Growth. 1983. V. 63. P. 425. https://doi.org/10.1016/0022-0248(83)90236-1
Shiraishi Y., Takano K., Matsubara J. et al. // J. Cryst. Growth. 2001. V. 229. P. 17. https://doi.org/10.1016/S0022-0248(01)01042-9
Sleptsova I.V., Senchenkov A.S., Egorov A.V. et al. // Proceedings of Joint 10th European and 6th Russian Symposium on Physical Sciences in Microgravity. St. Petersburg. Russia. 15–21 June 1997. 2. P. 68.
Ataka M., Katoh E., Wakayama N.I. // J. Cryst. Growth. 1997. V. 173. P. 592. https://doi.org/10.1016/S0022-0248(96)00821-4
Yesilyurt S., Motakef S., Grugel R., Mazuruk K. // J. Cryst. Growth. 2004. V. 263. P. 80. https://doi.org/10.1016/J.JCRYSGRO.2003.11.066
Lyubimova T.P., Croёll A., Dold P. et al. // J. Cryst. Growth. 2004. V. 266. P. 404. https://doi.org/10.1016/j.jcrysgro.2004.02.071
Rudolph P. // J. Cryst. Growth. 2008. V. 310. P. 1298. https://doi.org/10.1016/j.jcrysgro.2007.11.036
Gräbner O., Mühe A., Müller G. et al. // Mater. Sci. Eng. B. 2000. V. 73. P. 130. https://doi.org/10.1016/S0921-5107(99)00452-3
Vizman D., Gräbner O., Müller G. // J. Cryst. Growth. 2001. V. 233. P. 687. https://doi.org/10.1016/S0022-0248(01)01633-5
Hurle D.T.J., Series R.W. // Handbook of Crystal Growth / Ed. Hurle D.T.J. North-Holland: Elsevier, 1994. V. 2a. P. 259. https://doi.org/10.1107/S010876739709990X
Kimura T., Katsumata T., Nakajima M. et al. // J. Cryst. Growth. 1986. V. 79. P. 264. https://doi.org/10.1016/0022-0248(86)90447-1
Ozawa S., Nakayama H., Shiina Y. et al. // Inst. Phys. Conf. Ser. 1989. V. 96. P. 343.
Rudolph P., Czupalla M., Lux B. // J. Cryst. Growth. 2009. V. 311. Р. 4543. https://www.researchgate.net/publication/282977027_Crystal_growth_from_melt_in_combined_heater-magnet_modules
Abrachams M.S., Buiocchi C.J. // J. Appl. Phys. 1965. V. 36. P. 2855. https://doi.org/10.1063/1.1714594
Мильвидский М.Г., Освенский В.Б. Структурные дефекты в монокристаллах полупроводников. М.: Металлург, 1984. С. 75. https://www.studmed.ru/milvidskiy-m-g-osvenskiy-v-b-strukturnye-defekty-v-monokristallah-poluprovodnikov_6a780cf3b60.html
Ugova T.G., Belov A.G., Knyazev S.N. // Crystallography Reports. 2020. V. 65. P. 7. https://doi.org/10.1134/S1063774520010277
Патент DE10 2007 020 39 134 от 03.09.2009.
Мильвидский М.Г., Освенский В.Б. Структурные дефекты в монокристаллах полупроводников. М.: Металлург, 1984. С. 93. https://www.studmed.ru/milvidskiy-m-g-osvenskiy-v-b-strukturnye-defekty-v-monokristallah-poluprovodnikov_6a780cf3b60.html
Мильвидский М.Г., Освенский В.Б. Структурные дефекты в монокристаллах полупроводников. М.: Металлург, 1984. С. 172. https://www.studmed.ru/milvidskiy-m-g-osvenskiy-v-b-strukturnye-defekty-v-monokristallah-poluprovodnikov_6a780cf3b60.html
Scheel H.J. // J. Cryst. Growth. 2006. V. 287. Р. 214. https://doi.org/10.1016/j.jcrysgro.2005.10.100