Crystals of linear acenes: features of vapor phase growth and some properties

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The results of the crystallization studies of anthracene, tetracene, and pentacene under conditions of vapor phase transport in growth systems with single- and two-zone thermal fields are presented. The features of the phase behavior and thermal stability of the compounds were studied by using the methods of differential scanning calorimetry and thermogravimetric analysis to establish the heating regimes of substances ensuring crystal growth without damage from chemical degradation. Conditions for growing crystals of centimeter scale (0.2–2 cm) were determined for growth systems with single- and two-zone thermal fields. Based on the grown pentacene crystals, a series of field-effect transistors with top drain/source electrodes and top gate were fabricated and their electrical characteristics were studied.

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作者简介

A. Kulishov

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

编辑信件的主要联系方式.
Email: adakyla1255@gmail.com
俄罗斯联邦, Moscow

G. Yurasik

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: adakyla1255@gmail.com
俄罗斯联邦, Moscow

M. Lyasnikova

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: adakyla1255@gmail.com
俄罗斯联邦, Moscow

A. Lesnikov

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: adakyla1255@gmail.com
俄罗斯联邦, Moscow

V. Postnikov

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: postva@yandex.ru
俄罗斯联邦, Moscow

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2. Fig. 1. Temperature field profiles inside a growth furnace with one (a) and two (b) thermal zones

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3. Fig. 2. Scheme of the OPT device (a), optical image of the OPT based on a single crystal of pentacene before applying the gate electrode (b)

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4. Fig. 3. TGA (solid) and DSC (dotted) curves of anthracene (1), tetracene (2) and pentacene (3)

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5. Fig. 4. Anthracene crystals deposited at different source temperatures (shooting under UV illumination) on Al foil at TS = 403K (a) and TS = 443 K (b); distribution of deposited anthracene crystals on the surface of a quartz tube after a growth cycle at TS = 433 K (dotted area on the right – enlarged image of the crystal deposition zone near the source) (b)

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6. Fig. 5. Topographic AFM images of the surface of the developed face of anthracene crystals: a – a surface area with growth steps of 6-8 nm in height; b – a surface area with an elementary growth step of ~ 1 nm in height. The images show the profiles of growth stages with a height of ~3 (a) and ~1 nm (b)

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7. Fig. 6. Images of tetracene crystals grown at different temperatures of the TS source: 513 (a), 533 (b) and 553K (c)

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8. Fig. 7. Confocal (a) and topographic AFM image (b) of the surface areas of a tetracene crystal grown at TS = 488 K. The AFM image shows a surface profile with a marked step height of ~18 nm

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9. Fig. 8. Pentacene crystals deposited on foil (TS = 563 K). The distances from the center of the source with the substance are indicated at the top

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10. Fig. 9. Distribution of the average density of anthracene (a) and tetracene (b) crystals in a gradient thermal field at different source temperatures. Maxima 1 and 2 characterize the deposition regions of the largest and smallest crystals, respectively

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11. Fig. 10. Dependence on the temperature of the source of the averaged values of the length and growth rate of anthracene (a) and tetracene (b) crystals in a single-zone thermal field

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12. Fig. 11. Schematic phase diagram to explain the features of crystallization of crystals from steam in a temperature gradient field; solid curve is the crystal–vapor phase equilibrium line, dotted line is the boundary of the supersaturated vapor metastability region, black arrows indicate the path of crystallization

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13. Fig. 12. Supercooling of steam (ΔT1 = TS – Tm1) over a cluster of large anthracene (a) and tetracene (b) crystals as a function of source temperature

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14. Fig. 13. Distribution of anthracene crystals in a quartz growth tube after an experimental cycle in a two-band thermal field (T1 = 433, T2 = 373 K) (a); the largest anthracene crystals grown at T2 = 373 (b), T2 = 383 (c) and T2 = 393 K (d); image of the deposition area of the largest crystals between the two zones at 403 K (d). The photos were taken under UV illumination

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15. Fig. 14. Dependence of the average values of the thickness (1) and length (2) of anthracene crystals on the temperature difference ΔT1.2 between the zones (T1 = 433 K)

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16. Fig. 15. Distribution of tetracene crystals in the growth tube after an experimental cycle in a two–band thermal field (T1 = 533, T2 = 463 K) (a); b, c – enlarged images of sections of the growth tube in the vicinity marked with arrows I and II, respectively, in the upper photo; d - the largest of the crystals obtained tetracene; e is an enlarged image of the section of the crystal edge shown in Fig. (d)

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17. Fig. 16. Pentacene crystals grown in a two-band thermal field at T1 = 553 K: fragments of a crystal grown at T2 = 493 K for 72 hours (a) and an enlarged image of its edge (b); crystals grown at T2 = 513 K for 120 hours (c) and an enlarged images of the edge section of one of the crystals (d)

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18. Fig. 17. Topographic AFM image of a section of the surface of a pentacene crystal grown at T2 = 493 K. The insert at the top shows an enlarged image of the area highlighted at the bottom with a white dotted line with an island ~2.5 nm high

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19. Fig. 18. Transfer (a) and output (b) volt-ampere characteristics of an OPT based on a pentacene single crystal

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