Crystals of linear acenes: features of vapor phase growth and some properties
- Authors: Kulishov A.A.1, Yurasik G.A.1, Lyasnikova M.S.1, Lesnikov A.S.1, Postnikov V.A.1
-
Affiliations:
- Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
- Issue: Vol 69, No 2 (2024)
- Pages: 330-344
- Section: CRYSTAL GROWTH
- URL: https://ruspoj.com/0023-4761/article/view/673214
- DOI: https://doi.org/10.31857/S0023476124020171
- EDN: https://elibrary.ru/YSDOQY
- ID: 673214
Cite item
Abstract
The results of the crystallization studies of anthracene, tetracene, and pentacene under conditions of vapor phase transport in growth systems with single- and two-zone thermal fields are presented. The features of the phase behavior and thermal stability of the compounds were studied by using the methods of differential scanning calorimetry and thermogravimetric analysis to establish the heating regimes of substances ensuring crystal growth without damage from chemical degradation. Conditions for growing crystals of centimeter scale (0.2–2 cm) were determined for growth systems with single- and two-zone thermal fields. Based on the grown pentacene crystals, a series of field-effect transistors with top drain/source electrodes and top gate were fabricated and their electrical characteristics were studied.
Full Text

About the authors
A. A. Kulishov
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Author for correspondence.
Email: adakyla1255@gmail.com
Russian Federation, Moscow
G. A. Yurasik
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: adakyla1255@gmail.com
Russian Federation, Moscow
M. S. Lyasnikova
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: adakyla1255@gmail.com
Russian Federation, Moscow
A. S. Lesnikov
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: adakyla1255@gmail.com
Russian Federation, Moscow
V. A. Postnikov
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: postva@yandex.ru
Russian Federation, Moscow
References
- Birks J.B. The Theory and Practice of Scintillation Counting. Pergamon Press Ltd, 1967. 662 с.
- Красовицкий Б.М., Болотин Б.М. Органические люминофоры. М.: Химия, 1984. 336 с.
- Butko V.Y., Chi X., Ramirez A.P. // Solid State Commun. 2003. V. 128. P. 431. https://doi.org/10.1016/j.ssc.2003.08.041
- Takahashi T., Takenobu T., Takeya J., Iwasa Y. // Adv. Funct. Mater. 2007. V. 17. P. 1623. https://doi.org/10.1002/adfm.200700046
- Yu X., Kalihari V., Frisbie C.D. et al. // Appl. Phys. Lett. 2007. V. 90. P. 2005. https://doi.org/10.1063/1.2724895
- Bittle E.G., Biacchi A.J., Fredin L.A. et al. // Commun. Phys. 2019. V. 2. P. 29.
- https://doi.org/10.1038/s42005-019-0129-5
- Dong J., Yu P., Arabi S.A. et al. // Nanotechnology. 2016. V. 27. P. 1. https://doi.org/10.1088/0957-4484/27/27/275202
- Kim H.S., Kim S., Koo J.Y., Choi H.C. // J. Mater. Chem. C. 2021. V. 9. P. 1911. https://doi.org/10.1039/d0tc04698a
- Давыдов А.С. Теория поглощения света в молекулярных кристаллах. Киев: Издательство Академии наук УССР, 1951. 176 с.
- Ambrosio F., Wiktor J., Landi A., Peluso A. // J. Phys. Chem. Lett. 2023. V. 14. P. 3343. https://doi.org/10.1021/acs.jpclett.3c00191
- Кулишов А.А. Особенности роста кристаллов линейных сопряженных молекул из гомологических семейств аценов и олигофениленов. Дис. … канд. физ.-мат. наук. М.: ФНИЦ “Кристаллография и фотоника” РАН, 2022.
- Kulishov A.A., Yurasik G.A., Grebenev V.V., Postnikov V.A. // Crystallography Reports. 2022. V. 67. P. 1001. https://doi.org/10.1134/S1063774522060153
- Постников В.А., Кулишов А.А., Юрасик Г.А., Лебедев-Степанов П.В. // Кристаллография. 2022. Т. 67. С. 652. https://doi.org/10.31857/S0023476122040130
- Laudise R., Kloc C., Simpkins P.G., Siegrist T. // J. Cryst. Growth. 1998. V. 187. P. 449. https://doi.org/10.1016/S0022-0248(98)00034-7
- Postnikov V.A., Sorokina N.I., Lyasnikova M.S. et al. // Crystals. 2020. V. 10. P. 363. https://doi.org/10.3390/cryst10050363
- Lidberg R.L. “Time-of-Flight Investigation of Charge Carrier Mobilities in Oligoacene Single Crystals” PhD Thesis. University of Minnesota, 2017.
- Roberson L.B., Kowalik J., Tolbert L.M. et al. // J. Am. Chem. Soc. 2005. V. 127. P. 3069. https://doi.org/10.1021/ja044586r
- Jo S., Takenaga M. // Jpn. J. Appl. Phys. 2010. V. 49. P. 078002. https://doi.org/10.1143/JJAP.49.078002
- Jo S., Kajiwara K., Takenaga M. // Jpn. J. Appl. Phys. 2014. V. 53. P. 115506. https://doi.org/10.7567/JJAP.53.115506
- Postnikov V.A., Kulishov A.A., Yurasik G.A. et al. // Crystals. 2023. V. 13. P. 999. https://doi.org/10.3390/cryst13070999
- Park C., Park J.E., Choi H.C. // Acc. Chem. Res. 2014. V. 47. P. 2353. https://doi.org/10.1021/ar5000874
- Courté M., Ye J., Jiang H. et al. // Phys. Chem. Chem. Phys. 2020. V. 22. P. 19855. https://doi.org/10.1039/d0cp03109g
- Постников В.А., Сорокина Н.И., Кулишов А.А. и др. // Кристаллография. 2023. Т. 68. С. 120. https://doi.org/10.31857/S0023476123010228
- Nečas D., Klapetek P. Gwiddion: 2.59.
- De Boer R.W.I., Gershenson M.E., Morpurgo A.F., Podzorov V. // Phys. Status Solidi Appl. Res. 2004. V. 201. P. 1302. https://doi.org/10.1002/pssa.200404336
- Kahouli A. // J. Appl. Phys. 2012. V. 112. P. 064103. https://doi.org/10.1063/1.4752022
- Tsumura A., Koezuka H., Ando T. // Appl. Phys. Lett. 1986. V. 49. P. 1210. https://doi.org/10.1063/1.97417
- Рабинович В.А., Хавин З.Я. Краткий химический справочник. Л.: Химия, 1978. 392 с.
- Fulem M., Laštovka V., Straka M. et al. // J. Chem. Eng. Data. 2008. V. 53. P. 2175. https://doi.org/10.1021/je800382b.
- Чернов А.А., Гиваргизов Е.И., Багдасаров Х.С. и др. Современная кристаллография. Т. 3. Образование кристаллов. М.: Наука, 1980.
- Постников В.А., Кулишов А.А., Лясникова М.С. и др. // Кристаллография. 2021. Т. 66. С. 494. https://doi.org/10.31857/s0023476121030206
Supplementary files
