Structure of aluminum films for creating tunnel junctions.

M. V. Strelkov; Стрелков М. В.; A. M. Chekushkin; Чекушкин А. М.; A. A. Lomov; Ломов А. А.; S. V. Kraevsky; Краевский С. В.; M. Yu. Fominskii; Фоминский М. Ю.; M. A. Tarasov; Тарасов М. А.

doi:10.31857/S0033849423100157

Structure of aluminum films for creating tunnel junctions.

Authors: Strelkov M.V.¹^,2, Chekushkin A.M.¹, Lomov A.A.³, Kraevsky S.V.⁴, Fominskii M.Y.¹, Tarasov M.A.¹
Affiliations:
1. Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
2. Moscow Institute of Physics and Technology (National Research University)
3. Valiev Institute of Physics and Technology Russian Academy of Sciences
4. Scientific-Research Institute of Biomedical Chemistry named after V.N. Orekhovich
Issue: Vol 68, No 10 (2023)
Pages: 998-1002
Section: ЭЛЕКТРОНИКА СВЧ
URL: https://ruspoj.com/0033-8494/article/view/650459
DOI: https://doi.org/10.31857/S0033849423100157
EDN: https://elibrary.ru/YZIYOK
ID: 650459

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Abstract

A series of studies of the structure of aluminum films deposited on single-crystal
silicon substrates in different temperature conditions. The roughness and grain size of films of nuclei 20 nm thick, deposited at elevated temperatures, and also dusted on top of the seed layer at room temperature to a thickness of 150 nm. The film profile was measured in an electron microscope. It was found that films on the hot sublayer turn out to be smoother, more rigid (less loose) and allow one to expect the creation of superconductor–insulator–superconductor and superconductor–insulator–normal metal transitions, respectively, with a higher current density and lower capacitance.

Keywords

aluminum films, single-crystal silicon substrates, superconductor– insulator– superconductor, superconductor–insulator–normal metal transitions

References

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