Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics

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Дәйексөз келтіру

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Аннотация

An algorithm has been developed for determining from experimental field dependences the high–frequency impedance of silicon structures with an ultrathin (less than 5 nm) SiO2 layer of the insulating gap capacity and concentration of dopant directly at the Si-SiO2 interface. Relations allowing to estimate marginal errors of the developed approach are obtained. The proposed method is applied to experimental characteristics of the metal–oxide–semiconductor structure with a thickness of SiO2 4.2 nm. It is shown that the developed algorithm has sufficiently high accuracy and accessibility for use in processing high-frequency measurement data.

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Авторлар туралы

D. Belorusov

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

Ресей, Vvedensky sq. 1, Fryazino, Moscow region, 141190

E. Goldman

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

Ресей, Vvedensky sq. 1, Fryazino, Moscow region, 141190

G. Chucheva

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: gvc@ms.ire.rssi.ru

Fryazino branch

Ресей, Vvedensky sq. 1, Fryazino, Moscow region, 141190

I. Shusharin

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

Ресей, Vvedensky sq. 1, Fryazino, Moscow region, 141190

Әдебиет тізімі

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Жүктеу
2. Fig. 1. High-frequency capacitance-voltage characteristics and resistance of the silicon substrate: capacitance curves 1 - 1 MHz, 2 - 0.5 MHz, 3 - . The inset shows the dependence of the substrate resistance on the field voltage, calculated using formula (13).

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3. Fig. 2. Dependence of the dimensionless bending of bands in a semiconductor on the field voltage.

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4. Fig. 3. Dependence of the total concentration of the built-in charge, charges of electron traps and minority charge carriers on the Si−SiO2 contact on the field voltage. The inset shows the Vg window, where the characteristic is closest to the ideal; curve 1 is the derivative of psq with respect to voltage, curve 2 is the derivative of ns with respect to voltage.

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5. Fig. 4. Dependence of the functional Ω on Cиз and near the minimum point: (solid line), (dots), (asterisks). The variable is the deviation of the capacities Cиз and from the values ​​at the minimum of the functional Ω.

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