Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics

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Abstract

An algorithm has been developed for determining from experimental field dependences the high–frequency impedance of silicon structures with an ultrathin (less than 5 nm) SiO2 layer of the insulating gap capacity and concentration of dopant directly at the Si-SiO2 interface. Relations allowing to estimate marginal errors of the developed approach are obtained. The proposed method is applied to experimental characteristics of the metal–oxide–semiconductor structure with a thickness of SiO2 4.2 nm. It is shown that the developed algorithm has sufficiently high accuracy and accessibility for use in processing high-frequency measurement data.

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About the authors

D. A. Belorusov

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

Russian Federation, Vvedensky sq. 1, Fryazino, Moscow region, 141190

E. I. Goldman

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

Russian Federation, Vvedensky sq. 1, Fryazino, Moscow region, 141190

G. V. Chucheva

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Author for correspondence.
Email: gvc@ms.ire.rssi.ru

Fryazino branch

Russian Federation, Vvedensky sq. 1, Fryazino, Moscow region, 141190

I. A. Shusharin

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru

Fryazino branch

Russian Federation, Vvedensky sq. 1, Fryazino, Moscow region, 141190

References

  1. Zwanenburg F.A., Dzurak A.S., Morello A. et al. // Rev. Mod. Phys. 2013. V. 85. № 3. P. 961. doi: 10.1103/RevModPhys.85.961.
  2. Черняев М.В., Горохов С.А., Патюков С.И., Резванов А.А. // Электрон. техника. Сер. 3. Микроэлектроника. 2022. № 3. С. 31. doi: 10.7868/S2410993222030058.
  3. Muller D.A., Sorsch T., Moccio S. et al. // Nature. 1999. V. 399. № 6738. P. 758. doi: 10.1038/21602.
  4. Sze S.M., Kwok K. Ng. Physics of Semiconductor Devices. 3rd ed. N.Y.: John Willey @ Sons, 2007.
  5. Nicollian E.H., Brews I.R. MOS (Metal Oxide Semiconductor) Physics and Technology. N.Y.: John Willey @ Sons, 1982.
  6. Гольдман Е.И., Кухарская Н.Ф., Левашов С.А., Чучева Г.В. // ФТП. 2019. Т. 53. № 1. С. 46. doi: 10.21883/FTP.2019.01.46985.8802.
  7. Бонч-Бруевич В.Л., Звягин И.П., Кайпер Р. и др. Электронная теория неупорядоченных полупроводников. М.: Наука, 1981. С. 22.
  8. Шкловский Б.И., Эфрос А.Л. Физика полупроводников и полупроводниковых приборов. Электронные свойства легированных полупроводников. М.: Наука, 1979. С. 316.
  9. Барабан А.П., Булавинов В.В., Коноров П.П. Электроника слоев на кремнии. Л.: Изд-во ЛГУ, 1988.
  10. Lonnum L.F., Johannessen J.S. // Electron. Lett. 1986. V. 22. № 9. P. 456. doi: 10.1049/el:19860310
  11. Kevin J.Y., Chenming H. // IEEE Trans. 1999. V. ED-46. № 7. P. 1500. doi: 10.1109/16.772500

Supplementary files

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2. Fig. 1. High-frequency capacitance-voltage characteristics and resistance of the silicon substrate: capacitance curves 1 - 1 MHz, 2 - 0.5 MHz, 3 - . The inset shows the dependence of the substrate resistance on the field voltage, calculated using formula (13).

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3. Fig. 2. Dependence of the dimensionless bending of bands in a semiconductor on the field voltage.

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4. Fig. 3. Dependence of the total concentration of the built-in charge, charges of electron traps and minority charge carriers on the Si−SiO2 contact on the field voltage. The inset shows the Vg window, where the characteristic is closest to the ideal; curve 1 is the derivative of psq with respect to voltage, curve 2 is the derivative of ns with respect to voltage.

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5. Fig. 4. Dependence of the functional Ω on Cиз and near the minimum point: (solid line), (dots), (asterisks). The variable is the deviation of the capacities Cиз and from the values ​​at the minimum of the functional Ω.

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