Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride
- Authors: Islamov D.R1,2, Perevalov T.V1, Gismatulin A.A1, Azarov I.A1, Spesivtsev E.V1, Gritsenko V.A1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Issue: Vol 163, No 3 (2023)
- Pages: 392-400
- Section: Articles
- URL: https://ruspoj.com/0044-4510/article/view/653553
- DOI: https://doi.org/10.31857/S0044451023030112
- EDN: https://elibrary.ru/QEYBJE
- ID: 653553
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