Proximity effect in ferromagnetic structures InGaAs/GaAs/CoPt

S. V. Zaitsev; Зайцев С. В.

doi:10.31857/S0367676522700399

Proximity effect in ferromagnetic structures InGaAs/GaAs/CoPt

Authors: Zaitsev S.V.¹
Affiliations:
1. Institute of Solid State Physics of the Russian Academy of Sciences
Issue: Vol 87, No 2 (2023)
Pages: 213-217
Section: Articles
URL: https://ruspoj.com/0367-6765/article/view/654480
DOI: https://doi.org/10.31857/S0367676522700399
EDN: https://elibrary.ru/AESWOU
ID: 654480

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Abstract

Ferromagnetic influence of a thin (~8 nm) surface CoPt layer on the circular polarization of the InGaAs/GaAs quantum well photoluminescence is observed in structure GaAs/InGaAs/GaAs/Al₂O₃(1 нм)/CoPt with narrow GaAs spacer d_S = 5 nm, while electroluminescence is polarized in the whole range of d_S = 5–100 nm. It is suggested that the short-range proximity effect is determined by overlap of electrons wave functions with the nearby ferromagnetic CoPt film.

About the authors

S. V. Zaitsev

Institute of Solid State Physics of the Russian Academy of Sciences

Author for correspondence.
Email: szaitsev@issp.ac.ru
Russia, 142432, Chernogolovka

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