Influence of annealing on the lateral homogeneity of Ti/InAlAs Schottky barriers
- Authors: Genze I.Y.1,2, Aksenov M.S.1,2, Dmitriev D.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Novosibirsk National Research State University
- Issue: Vol 88, No 9 (2024)
- Pages: 1473-1477
- Section: Quantum Optics and Quantum Technologies
- URL: https://ruspoj.com/0367-6765/article/view/681835
- DOI: https://doi.org/10.31857/S0367676524090209
- EDN: https://elibrary.ru/OCQTIC
- ID: 681835
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