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Effects of quantum recoil forces in resistive switching in memristors
- Authors: Kharlanov O.G1
-
Affiliations:
- Lomonosov Moscow State University
- Issue: Vol 117, No 5-6 (3) (2023)
- Pages: 387-388
- Section: Articles
- URL: https://ruspoj.com/0370-274X/article/view/662539
- DOI: https://doi.org/10.31857/S1234567823050117
- EDN: https://elibrary.ru/PYFCHT
- ID: 662539
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About the authors
O. G Kharlanov
Lomonosov Moscow State University
Author for correspondence.
Email: letters@kapitza.ras.ru
References
- L. Chua, IEEE Trans. Circuit Theory 18, 507 (1971).
- D. Ielmini and H.-S. P. Wong, IEEE Nanotechnol. Mag. 1, 333 (2018).
- Z. Wang, H. Wu, G. W. Burr, C. S. Hwang, K. L. Wang, Q. Xia, and J. J. Yang, Nat. Rev. Mater. 5, 173 (2020).
- R. Landauer, IBM J. Res. Dev. 1, 223 (1957).
- W. Xue, S. Gao, J. Shang, X. Yi, G. Liu, and R. Li, Adv. Electron. Mater. 5, 1800854 (2019).
- A. A. Minnekhanov, B. S. Shvetsov, M. M. Martyshov, K. E. Nikiruy, E. V. Kukueva, M. Yu. Presnyakov, P. A. Forsh, V. V. Rylkov, V. V. Erokhin, V. A. Demin, and A. V. Emelyanov, Org. Electron. 74, 89 (2019).
- D. Dundas, E. J. McEniry, and T. N. Todorov, Nat. Nanotechnol. 4, 99 (2009).
- O. G. Kharlanov, B. S. Shvetsov, V. V. Rylkov, and A. A. Minnekhanov, Phys. Rev. Applied 17, 054035 (2022).
- V.-N. Do, Adv. Nat. Sci: Nanosci. Nanotechnol. 5, 033001 (2014).
- R. E. Peierls, Quantum Theory of Solids, Oxford University Press, London (1955).
- H. W. Sheng, M. J. Kramer, A. Cadien, T. Fujita, and M. W. Chen, Phys. Rev. B 83, 134118 (2011).
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