PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the   x  Cd  x  Te Topological Phase

S. N. Chmyr'; Чмырь С. Н.; A. S. Kazakov; Казаков А. С.; A. V. Galeeva; Галеева А. В.; D. E. Dolzhenko; Долженко Д. Е.; A. I. Artamkin; Артамкин А. И.; A. V. Ikonnikov; Иконников А. В.; N. N. Mikhaylov; Михайлов Н. Н.; S. A. Dvoretskiy; Дворецкий С. А.; M. I. Bannikov; Банников М. И.

doi:10.31857/S1234567823170068

PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the _xCd_xTe Topological Phase

Authors: Chmyr' S.N.¹, Kazakov A.S.¹, Galeeva A.V.¹, Dolzhenko D.E.¹, Artamkin A.I.¹, Ikonnikov A.V.¹, Mikhaylov N.N.², Dvoretskiy S.A.², Bannikov M.I.³
Affiliations:
1. Faculty of Physics, Moscow State University
2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
3. Lebedev Physical Institute, Russian Academy of Sciences
Issue: Vol 118, No 5-6 (9) (2023)
Pages: 341-345
Section: Articles
URL: https://ruspoj.com/0370-274X/article/view/663068
DOI: https://doi.org/10.31857/S1234567823170068
EDN: https://elibrary.ru/JZVJHB
ID: 663068

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Abstract

The PT-symmetric photoconductivity has been detected for the first time in microwave-irradiated heterostructures based on thick Hg_{1 −} _xCd_xTe films with the CdTe content x corresponding to the topological phase although the magnetic field symmetry (T symmetry) and the symmetry in the positions of potential contact pairs (P symmetry) are not conserved separately. The microwave photoconductivity in similar heterostructures based on the trivial Hg_{1 −} _xCd_xTe phase is both P- and T-symmetric.

References

M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
Y. Ando, J. Phys. Soc. Jpn. 82, 102001 (2013).
O. Breunig and Y. Ando, Nat. Rev. Phys. 4, 184 (2022).
H. Plank and S. D. Ganichev, Solid State Electronics 147, 44 (2018).
K.-M. Dantscher, D. A. Kozlov, P. Olbrich, C. Zoth, P. Faltermeier, M. Lindner, G. V. Budkin, S. A. Tarasenko, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, D. Weiss, B. Jenichen, and S. D. Ganichev, Phys. Rev. B 92, 165314 (2015).
K.-M. Dantscher, D. A. Kozlov, M. T. Scherr, S. Gebert, J. B¨arenf¨anger, M. V. Durnev, S. A. Tarasenko, V. V. Bel'kov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, J. Ziegler, D. Weiss, and S. D. Ganichev, Phys. Rev B 95, 201103 (2017).
S. G. Egorova, V. I. Chernichkin, L. I. Ryabova, E. P. Skipetrov, L. V. Yashina, S. N. Danilov, S. D. Ganichev, and D. R. Khokhlov, Sci. Rep. 5, 11540 (2015).
A. V. Galeeva, S. G. Egorova, V. I. Chernichkin, M. E. Tamm, L. V. Yashina, V. V.Rumyantsev, S. V. Morozov, H. Plank, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov, Semicond. Sci. Technol. 31, 095010 (2016).
A. V. Galeeva, I. V. Krylov, K. A. Drozdov, A. F. Knjazev, A. V. Kochura, A. P. Kuzmenko, V. S. Zakhvalinskii, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov, Beilstein J. Nanotechnol. 8, 167 (2017).
A. Rogalski, Rep. Prog. Phys. 68, 2267 (2005).
M. Weiler, Semiconductors and semimetals, ed. by R. Willardson and A. Beer, Academic press, N.Y. (1981), v. 16, p. 119.
M. Orlita, D. M. Basko, M. S. Zholudev, F. Teppe, W. Knap, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, P. Neugebauer, C. Faugeras, A.-L. Barra, G. Martinez, and M. Potemski, Nat. Phys. 10, 233 (2014).
A. V. Galeeva, A. S. Kazakov, A. I. Artamkin, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 10, 2377 (2020).
A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 11, 1587 (2021).
A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 11, 11638 (2021).
A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, S. N. Danilov, S. A. Dvoretskiy, N. N. Mikhailov, L. I. Ryabova, and D. R. Khokhlov, Beilsten J. Nanotechnol. 9, 1035 (2018).
K. K. Svitashev, S. A. Dvoretskiy, Y. G. Sidorov, V. A. Shvets, A. S. Mardezhov, I. E. Nis, V. S. Varavin, V. Liberman, and V. G. Remesnik, Crystal Research and Technology 29(7), 931 (1994).
V. S. Varavin, S. A. Dvoretskiy, D. G. Ikusov, N. N. Mikhailov, V. G. Remesnik, G. Yu. Sidorov, Yu. G. Sidorov, P. N. Sizikov, and I. N. Uzhakov, Optoelectroncs, Instrumentation and Data Processing 49, 4 (2013).
S. A. Dvoretsky, D. G. Ikusov, Z. D. Kvon, N. N. Mikhailov, V. G. Remesnik, R. N. Smirnov, Yu. G. Sidorov, and V. A. Shvets, Semiconductor Physics, Quantum Electronics & Optoelectronics 10, 47 (2007).

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Vol 121, No 11-12 (2025)

PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the _xCd_xTe Topological Phase

Full Text

Abstract

About the authors

S. N. Chmyr'

A. S. Kazakov

A. V. Galeeva

D. E. Dolzhenko

A. I. Artamkin

A. V. Ikonnikov

N. N. Mikhaylov

S. A. Dvoretskiy

M. I. Bannikov

References

Supplementary files

PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the xCdxTe Topological Phase

Full Text

Abstract

About the authors

References

Supplementary files

PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the _xCd_xTe Topological Phase