STUDY OF ELECTROCHEMICAL SYNTHESIS FEATURES OF CNTS THIN FILMS ON TITANIUM AND TANTALUM FOIL SUBSTRATES

V. V. Rakitin; Ракитин В. В.; L. S. Feoktistova; Феоктистова Л. С.; M. V. Gapanovich; Гапанович М. В.; A. V. Stanchik; Станчик А. В.; D. M. Sedlovets; Седловец Д. М.

doi:10.31857/S0424857023120101

STUDY OF ELECTROCHEMICAL SYNTHESIS FEATURES OF CNTS THIN FILMS ON TITANIUM AND TANTALUM FOIL SUBSTRATES

Authors: Rakitin V.V.¹, Feoktistova L.S.², Gapanovich M.V.¹^,2, Stanchik A.V.³, Sedlovets D.M.⁴
Affiliations:
1. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS
2. Department of Fundamental Physical and Chemical Engineering, M. V. Lomonosov Moscow State University
3. Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus
4. Institute of Microelectronics Technology and High Purity Materials, RAS
Issue: Vol 59, No 12 (2023)
Pages: 884-893
Section: Articles
URL: https://ruspoj.com/0424-8570/article/view/671894
DOI: https://doi.org/10.31857/S0424857023120101
EDN: https://elibrary.ru/QAVVXY
ID: 671894

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Abstract
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Abstract

The features of electrochemical deposition of copper layer on titanium and tantalum flexible substrates, as well as modes of sequential electrochemical deposition of tin layer on Cu/Ti and Cu/Ta and nickel layer on Sn/Cu/Ti and Sn/Cu/Ta from corresponding electrolyte solutions were studied by cyclic voltammetry. Deposition potentials for each metal layer were determined taking into account the type of substrate, and a wide set of the Cu-Sn-Ni/Ti and Cu-Sn-Ni/Ta stable precursor films were synthesized. The stage of annealing in an active sulfur atmosphere (sulfurization) has been optimized in order to obtain the Cu2NiSnS4 stable compounds. Based on the obtained XRD and Raman spectroscopy data, it was found that annealing in active sulfur atmosphere at 550 °C for 60 minutes is necessary to synthesize the Cu2NiSnS4 stable single-phase compounds with polycrystalline structure on Ta and Ti substrates

Keywords

cyclic voltammetry, Cu2NiSnS4 thin films, electrochemical synthesis, solar energy

References

Chandel, T., Thakur, V., Halaszova, S., Prochazka, M., Haško, D., Velic, D., and Poolla, R., Growth and properties of sprayed CZTS thin films, J. Electron. Mater., 2018, vol. 47, p. 5477.
Hosseinpour, R., Izadifard, M., Ghazi, M.E., and Bahramian, B., Effect of annealing temperature on structural, optical, and electrical properties of sol–gel spin-coating-derived Cu2ZnSnS4 thin films, J. Electron. Mater., 2018, vol. 47, p. 1080.
Fouad, S.S., El Radaf, I.M., Sharma, P., and El Bana, M.S., Multifunctional CZTS thin films: structural, optoelectrical, electrical and photovoltaic properties, J. Alloys Compd., 2018, vol. 757, p. 124.
Marzougi, M., Ben Rabeh, M., and Kanzari, M., Effect of Na doping on structural and optical properties in Cu2ZnSnS4 thin films synthesized by thermal evaporation method, Thin Solid Films, 2019, vol. 672, p. 41.
Ракитин, В.В., Новиков, Г.Ф. Солнечные преобразователи третьего поколения на основе четверных соединений меди со структурой кестерита. Успехи химии. 2017. Т. 86. С. 99. [Rakitin, V.V. and Novikov, G.F., Third-generation solar cells based on quaternary copper compounds with the kesterite-type structure, Russ. Chem. Rev., 2017, vol. 86, p. 99.]
Гапанович, М.В., Ракитин, В.В., Новиков, Г.Ф. Новые поглощающие слои на основе четверных соединений меди Cu–A–B–S–Se (A = Ba, Sr, Fe, Ni, Mn; B = Si, Ge, Sn) для тонкопленочных солнечных элементов третьего поколения (обзор). Журн. неорган. химии. 2022. Т. 67. С. 3. [Gapanovich, M.V., Rakitin, V.V., and Novikov, G.F., New absorbers for third-generation thin-film solar cells based on Cu–A–B–S–Se (A = Ba, Sr, Fe, Ni, or Mn; B = Si, Ge, or Sn) quaternary copper compounds, Russ. J. Inorg. Chem., 2022, vol. 67, p. 1.]
Ghosh, A., Thangavel, R., and Rajagopalan, M., First-principles study of structural stability and optical properties of Cu2XSnY4 (X = Fe, Co, Ni; Y = S, Se) for photovoltaic applications, Energ. Env. Focus, 2014, vol. 3, p. 142.
Kamble, A., Mokurala, K., Gupta, A., Mallick, S., and Bhargava, P., Synthesis of Cu2NiSnS4 nanoparticles by hot injection method for photovoltaic applications, Mater. Lett., 2014, vol. 137, p. 440.
Wang, T.-X., Li, Y.-G., Liu, H.-R., Li, H., and Chen, S.-X., Flower-like Cu2NiSnS4 nanoparticles synthesized by a facile solvothermal method, Mater. Lett., 2014, vol. 124, p. 148.
Sarkar, S., Das, B., Midya, P.R., Das, G.C., and Chattopadhyay, K.K., Optical and thermoelectric properties of chalcogenide based Cu2NiSnS4 nanoparticles synthesized by a novel hydrothermal route, Mater. Lett., 2015, vol. 152, p. 155.
Sarilmaz, A. and Ozel, F., Synthesis of band-gap tunable earth-abundant CXTS (X = Mn+2, Co+2, Ni+2 and Zn+2) nanorods: Toward a generalized synthesis strategy of quaternary chalcogenides, J. Alloys Compd., 2019, vol. 780, p. 518.
Ozel, F., Earth-abundant quaternary semiconductor Cu2MSnS4 (M = Fe, Co, Ni and Mn) nanofibers: Fabrication, characterization and band gap arrangement, J. Alloys Compd., 2016, vol. 657, p. 157.
Sahaya Dennish Babu, G., Shajan, X.S., Alwin, S., Ramasubbu, V., and Balerao, G.M., Effect of reaction period on stoichiometry, phase purity, and morphology of hydrothermally synthesized Cu2NiSnS4 nanopowder, J. Electron. Mater., 2018, vol. 47, p. 312.
Ghosh, A., Biswas, A., Thangavel, R., and Udayabhanu, G., Photo-electrochemical properties and electronic band structure of kesterite copper chalcogenide Cu2–II–Sn–S4 (II = Fe, Co, Ni) thin films, RSC Adv., 2016, vol. 6, p. 96025.
Dridi, S., Bitri, N., and Abaab, M., Synthesis of quaternary Cu2NiSnS4 thin films as a solar energy material prepared through “spray” technique, Mater. Lett., 2017, vol. 204, p. 61.
Jariwala, A., Chaudhuri, T.K., Patel, S., Toshniwal, A., Kheraj, V., and Ray, A., Direct-coated copper nickel tin sulphide (Cu2NiSnS4) thin films from molecular ink, Mater. Lett., 2018, vol. 215, p. 118.
Yang, C.L., Chen, Y.H., Lin, M., Wu, S.L., Li, L., Liu, W.C., Wu, X.S., and Zhang, F.M., Structural, optical and magnetic properties of Cu2NiSnS4 thin films deposited by facile one-step electrodeposition, Mater. Lett., 2016, vol. 166, p. 101.
Chen, H.J., Fu, S.W., Tsai, T.C., and Shih, C.F., Quaternary Cu2NiSnS4 thin films as a solar material prepared through electrodeposition, Mater. Lett., 2016, vol. 166, p. 215.
Chihi, A., Fethi, M., and Brahim, B., Synthesis and characterization of photoactive material Cu2NiSnS4 thin films, J. Mater. Sci.: Mater. Electron., 2019, vol. 30, p. 3338.
Beraich, M., Taibi, M., Guenbour, A., Zarrouk, A., Bellaouchou, A., and Fahoume, M., Synthesis of tetragonal Cu2NiSnS4 thin film via low-cost electrodeposition method: effect of Ni2+ molarity, J. Electr. Mater., 2019, vol. 49, p, 728.
Ракитин, В.В., Гапанович, М.В., Новиков, Г.Ф. Формирование примесной фазы MoS2 на границе CZTS/Mo в процессе сульфуризации прекурсорных пленок Cu–Zn–Sn. Изв. Акад. наук. Сер. хим. 2015. Т. 11. С. 2586. [Rakitin, V.V., Gapanovich, M.V., and Novikov, G.F., The formation of MoS2 secondary phase at the Cu–Zn–Sn–S/Mo interface during the sulfurization process of Cu–Zn–Sn precursor films, Russ. Chem. Bull., 2015, vol. 64, p. 2586.]
Hansen, R.M., Adherent electroplating on molybdenum, PhD thesis, Newark College of Engineering, New Jersey (1952).
Ait elhaj, D., El kissani, A., Elyaagoubi, M., Ait dads, H., Welatta, F., Nkhaili, L., Chaib, H., and Outzourhit, A., Development of Cu2NiSnS4 based thin film solar cells without a sulfurization step, Mater. Sci. Semicond. Proces., 2020, vol. 107, p. 104811.
Ozel, F., Aslan, E., Istanbullu, B., Akay, O., and Hatay Patir, I., Photocatalytic hydrogen evolution based on Cu2ZnSnS4, Cu2NiSnS4 and Cu2CoSnS4 nanocrystals, Appl. Catal. B: Envir., 2016, vol. 198, p. 67.
Sahoo, M.K., Gusain, M., Thangriyal, S., Nagarajan, R., and Rao, G.R., Energy storage study of trimetallic Cu2MSnS4 (M: Fe, Co, Ni) nanomaterials prepared by sequential crystallization method, J. Solid State Chem., 2020, vol. 282, p. 121049.