Control of Mask Erosion and Correction of Structure Profile in an Adapted Process of Deep Reactive Ion Etching of Silicon

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Дәйексөз келтіру

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Ашық рұқсат Ашық рұқсат
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Рұқсат жабық Тек жазылушылар үшін

Аннотация

The paper presents a new approach to optimizing the cyclic procedure of deep reactive ion etching (DRIE) of silicon. The etching parameters were adjusted based on direct measurements of the rates of deposition and etching processes in a cycle on the surface of oxidized silicon using a laser interferometer. A high-quality etching profile with minimal erosion of the SiO2 mask (maximum process selectivity) was achieved by adapting the three-stage DRIE process according to the measured duration of polymer removal at the bottom of the grooves in silicon. The possibilities of correcting the profile shape by changing the DRIE parameters during the etching process are presented. As a result of optimization, a recipe was obtained for etching grooves 30 µm wide to a depth of 350 µm with a wall angle of 0.36°, at a process rate and selectivity of 3.4 µm/min and ~400, respectively. The adapted recipe was successfully applied in the manufacturing technology of the sensitive element of a micromechanical gyroscope.

Толық мәтін

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Авторлар туралы

O. Morozov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Хат алмасуға жауапты Автор.
Email: moleg1967@yandex.ru
Ресей, Yaroslavl, 150067

Әдебиет тізімі

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Әрекет
1. JATS XML
2. Fig. 1. Schematic representation of etching profile of different shapes: (a) - vertical up to the critical value of aspect ratio ARc = hc / w, (b) - barrel-shaped. θ - angle of inclination of walls relative to the vertical.

Жүктеу (68KB)
3. Fig. 2. (a) - Normalised values of Q, P, U during one TMDSE cycle, (b) - rates of processes V: deposition (-V) and etching (+V) at different stages of TMDSE (R = 0.27, tr = 1.9 s).

Жүктеу (234KB)
4. Fig. 3. Dependences of the average etching rate of SiO2 (1) and selectivity of TMDSE process (2) on the parameter Δ = tbias - tr. Circles - VSiO2 values calculated from the change of SiO2 layer thickness over several tens of cycles, line - dependence of VSiO2 on Δ calculated by formula (1). The selectivity values were calculated for VSi = 70.4 nm/s, at an etching depth of 338 μm for 400 cycles (Table 2).

Жүктеу (70KB)
5. Fig. 4. Wall surface texture specific to the cyclic TMDSE procedure in the form of scallops under the mask (a), groove etch profiles at different R-Δ parameters: 0.2-1.3 s, h = 114 μm (b), 0.2-1.3 s, h = 296 μm (c), 0.17-0.8 s, (d), 0.13-0.4 s (e, f).

Жүктеу (194KB)
6. Fig. 5. Etching profiles of grooves at R = 0.17: (a) - Δ = 1.8 s, (b) - Δ = 0.8 s. View of the groove wall (Δ = 0.8 s) throughout its depth (c), in the middle (d), at the bottom (e). Results obtained by TMDSE process with segmented change of Δ from 0.8 s to 1.8 s (e - i).

Жүктеу (300KB)
7. Fig. 6. Etching profiles of grooves at different R-Δ parameters: 0.3-1.6 s (a), 0.27-1.1 s (b), 0.23-0.6 s (c).

Жүктеу (120KB)
8. Fig. 7. Results of manufacturing of a sensitive element of a microgyroscope: (a) - etching profile of ‘cut’ grooves - h = 349 µm; (b) - view of a fragment of the sensitive element at an angle of 45°; (c) - enlarged image of the wall surface of the structural element of the sensitive element of its entire height; (d), (e) - texture of the wall surface in the upper and lower parts, respectively.

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