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No 5 (2024)
Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing
Yunin P.A., Drozdov M.N., Novikov A.V., Shmagin V.B., Demidov E.V., Mikhailov A.N., Tetelbaum D.I., Belov A.I.
PDF
(Rus)
No 1 (2023)
Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C60 Ions
Karasev K.P., Strizhkin D.A., Titov A.I., Karaseov P.A.
PDF
(Rus)
No 7 (2024)
Formation of thin GaAs buffer layers on silicon for light-emitting devices
Lendyashova V.V., Ilkiv I.V., Borodin B.R., Kirilenko D.A., Dragunova A.S., Shugabaev T.М., Cirlin G.E.
PDF
(Rus)
No 8 (2023)
Influence of the Substrate on the Photoluminescence Spectra of CaF2/Si Multilayer Structures
Velichko A.A., Ilyushin V.A., Krupin A.Y., Filimonova N.I., Rudenko I.E.
PDF
(Rus)
No 9 (2024)
On anomalous diffusion of fast electrons through the silicon crystal
Syshchenko V.V., Tarnovsky A.I., Dronik V.I.
PDF
(Rus)
No 10 (2024)
Investigation of high-intensity implantation of titanium ions into silicon under conditions of the beam’s energy impact on the surface
Ivanova А.I., Vakhrushev D.О., Korneva О.S., Gurulev А.V., Varlachev V.А., Efimov D.D., Chernyshev А.А.
PDF
(Rus)
No 1 (2024)
Composition of silicon jointly doped with impurity atoms of gallium and phosphorus
Zikrillaev N.F., Koveshnikov S.V., Turekeev X.S., Ismailov B.K.
PDF
(Rus)
No 4 (2024)
Modeling of silicon irradiation with C60 ions and the role of the interaction potential
Karasev K.P., Strizhkin D.A., Titov A.I., Karaseov P.A.
PDF
(Rus)
No 4 (2024)
On the growth of InGaN nanowires by molecular-beam epitaxy: influence of the III/V flux ratio on the structural and optical properties
Gridchin V.O., Komarov S.D., Soshnikov I.P., Shtrom I.V., Reznik R.R., Kryzhanovskaya N.V., Cirlin G.E.
PDF
(Rus)
1 - 9 of 9 Items

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