Terahertz radiation sources based on AlGaAs/GaAs superlattices

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Resumo

We proposed several types of design of terahertz emitters based on the perfect AlGaAs/GaAs superlattices obtained by molecular-beam epitaxy. Transition energies, gain, and losses are calculated for the developed structures, which determined the design of the created experimental structures.

Sobre autores

A. Dashkov

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University

Autor responsável pela correspondência
Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg

L. Gerchikov

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University

Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg

L. Goray

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University; Institute for Analytical Instrumentation of the Russian Academy of Sciences; University associated with IE EAEC

Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg; Russia, 190103, St. Petersburg; Russia, 199106, St. Petersburg

N. Kharin

Peter the Great St. Petersburg Polytechnic University

Email: Dashkov.Alexander.OM@gmail.com
Russia, 195251, St. Petersburg

M. Sobolev

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University

Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg

R. Khabibullin

Mokerov Institute of Ultra-high Frequency Semiconductor Electronics of the Russian Academy of Sciences

Email: Dashkov.Alexander.OM@gmail.com
Russia, 117105, Moscow

A. Bouravleuv

St. Petersburg Electrotechnical University; Institute for Analytical Instrumentation of the Russian Academy of Sciences; University associated with IE EAEC

Email: Dashkov.Alexander.OM@gmail.com
Russia, 197376, St. Petersburg; Russia, 190103, St. Petersburg; Russia, 199106, St. Petersburg

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Declaração de direitos autorais © А.С. Дашков, Л.Г. Герчиков, Л.И. Горай, Н.Ю. Харин, М.С. Соболев, Р.А. Хабибуллин, А.Д. Буравлев, 2023