Terahertz radiation sources based on AlGaAs/GaAs superlattices
- Авторлар: Dashkov A.S.1,2, Gerchikov L.G.1,2, Goray L.I.1,2,3,4, Kharin N.Y.5, Sobolev M.S.1,2, Khabibullin R.A.6, Bouravleuv A.D.2,3,4
- 
							Мекемелер: 
							- Saint Petersburg National Research Academic University of the Russian Academy of Sciences
- St. Petersburg Electrotechnical University
- Institute for Analytical Instrumentation of the Russian Academy of Sciences
- University associated with IE EAEC
- Peter the Great St. Petersburg Polytechnic University
- Mokerov Institute of Ultra-high Frequency Semiconductor Electronics of the Russian Academy of Sciences
 
- Шығарылым: Том 87, № 6 (2023)
- Беттер: 907-912
- Бөлім: Articles
- URL: https://ruspoj.com/0367-6765/article/view/654394
- DOI: https://doi.org/10.31857/S0367676523701570
- EDN: https://elibrary.ru/VODKEC
- ID: 654394
Дәйексөз келтіру
Аннотация
We proposed several types of design of terahertz emitters based on the perfect AlGaAs/GaAs superlattices obtained by molecular-beam epitaxy. Transition energies, gain, and losses are calculated for the developed structures, which determined the design of the created experimental structures.
Авторлар туралы
A. Dashkov
Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University
							Хат алмасуға жауапты Автор.
							Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg						
L. Gerchikov
Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University
														Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg						
L. Goray
Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University; Institute for Analytical Instrumentation of the Russian Academy of Sciences; University associated with IE EAEC
														Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg; Russia, 190103, St. Petersburg; Russia, 199106, St. Petersburg						
N. Kharin
Peter the Great St. Petersburg Polytechnic University
														Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 195251, St. Petersburg						
M. Sobolev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University
														Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg						
R. Khabibullin
Mokerov Institute of Ultra-high Frequency Semiconductor Electronics of the Russian Academy of Sciences
														Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 117105, Moscow						
A. Bouravleuv
St. Petersburg Electrotechnical University; Institute for Analytical Instrumentation of the Russian Academy of Sciences; University associated with IE EAEC
														Email: Dashkov.Alexander.OM@gmail.com
				                					                																			                												                								Russia, 197376, St. Petersburg; Russia, 190103, St. Petersburg; Russia, 199106, St. Petersburg						
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