Interference Transport in a Two-Dimensional Topological Insulator in a CdHgTe Quantum Well
- Authors: Ryzhkov M.S1,2, Kozlov D.A1,3, Khudayberdiev D.A1, Kvon Z.D1,2, Mikhaylov N.N1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Experimental and Applied Physics, University of Regensburg
- Issue: Vol 117, No 1-2 (1) (2023)
- Pages: 50-54
- Section: Articles
- URL: https://ruspoj.com/0370-274X/article/view/663576
- DOI: https://doi.org/10.31857/S1234567823010068
- EDN: https://elibrary.ru/NVHYAF
- ID: 663576
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