Enviar artigo por via de e-mail Interference Transport in a Two-Dimensional Topological Insulator in a CdHgTe Quantum Well
- Autores: Ryzhkov M.S1,2, Kozlov D.A1,3, Khudayberdiev D.A1, Kvon Z.D1,2, Mikhaylov N.N1
-
Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Experimental and Applied Physics, University of Regensburg
- Edição: Volume 117, Nº 1-2 (1) (2023)
- Páginas: 50-54
- Seção: Articles
- URL: https://ruspoj.com/0370-274X/article/view/663576
- DOI: https://doi.org/10.31857/S1234567823010068
- EDN: https://elibrary.ru/NVHYAF
- ID: 663576
Citar
Texto integral
Acesso aberto
Acesso está concedido
Acesso é pago ou somente para assinantes
Resumo
Interference transport in mesoscopic samples of a two-dimensional topological insulator in CdHgTe quantum wells is studied for the first time. It is established that quasi-ballistic edge transport in such an insulator exists at lengths up to 10 µm. In this transport regime, almost periodic Aharonov–Bohm oscillations caused by the formation of closed loops with a characteristic size of about 200 nm by edge states are found. The phase coherence length in the two-dimensional topological insulator is determined for the first time from the measured temperature dependence of their amplitude.
Sobre autores
M. Ryzhkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia; 630090, Novosibirsk, Russia
D. Kozlov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Experimental and Applied Physics, University of Regensburg
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia; D-93040, Regensburg, Germany
D. Khudayberdiev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia; 630090, Novosibirsk, Russia
N. Mikhaylov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia
Bibliografia
- М. С. Рыжков, Д. А. Козлов, Д. А. Худайбердиев, З. Д. Квон, Н. Н. Михайлов, С. А. Дворецкий, Письма в ЖЭТФ 115, 230 (2022).
- G. M. Gusev, Z. D. Kvon, E. B. Olshanetsky, and N. N. Mikhailov, Solid State Commun. 302, 113701 (2019).
- З. Д. Квон, Д. А. Козлов, Е. Б. Ольшанецкий, Г. М. Гусев, Н. Н. Михайлов, С. А. Дворецкий, УФН 190, 643 (2020).
- G. M. Gusev, Z. D. Kvon, O. A. Shegai, N. N. Mikhailov, and S. A. Dvoretsky, Solid State Commun. 205, 4 (2015).
- P. Delplace and M. Bu¨ttiker, Phys. Rev. Lett. 109, 246803 (2012).
- B. L. Altshuler, A. G. Aronov, and D. E. Khmelnitskу, J. Phys. C: Solid State Phys. 15, 7367 (1982).
- S. U. Piatrusha, E. S. Tikhonov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, and V. S. Khrapai, Phys. Rev. Lett. 123, 056801 (2019).
Arquivos suplementares
